How Much More Efficient Are GaN Devices Than Silicon?

How Much More Efficient Are GaN Devices Than Silicon?

Power Integrations’ Andy Smith explains why GaN semiconductors are revolutionizing power electronics at PCIM 2025. Learn the key advantages over silicon!

In this technical presentation from PCIM 2025, Power Integrations expert Andy Smith breaks down wide bandgap semiconductor technology, focusing on GaN (Gallium Nitride) and silicon carbide solutions for modern power conversion applications.

📋 CHAPTERS:
0:00 What Are Wide Bandgap Semiconductors?
0:17 Why GaN and Silicon Carbide Are Better Switches
0:29 Lower RDS(on) and Smaller Transistors
0:56 Switching Losses vs Conduction Losses
1:29 Power Supply Applications
1:49 GaN’s First Success: Rapid Charging
2:28 The 2% Efficiency Gain That Changed Everything
2:47 GaN Robustness – No Avalanche Breakdown
3:16 Expanding Into Appliances
3:42 The Value Proposition of GaN
4:19 GaN Moving to Higher Voltages

🔍 KEY TOPICS COVERED:
– GaN vs Silicon performance comparison
– RDS(on) advantages in wide bandgap devices
– Switching efficiency improvements
– Real-world applications (rapid chargers, power supplies, appliances)
– Cost-value analysis for system design
– Future voltage scaling to 1700V

Perfect for power electronics engineers, circuit designers, and anyone interested in the latest semiconductor technologies transforming power conversion efficiency.

🏢 About Power Integrations: Leading provider of high-voltage integrated circuits for energy-efficient power conversion.

📍 Recorded at PCIM Europe 2025 – The leading international exhibition and conference for power electronics, intelligent motion, renewable energy, and energy management.

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